Design of a light intensity/ToF sensor in CMOS technology and a 2D/3D smart camera
@ Instituto de Microelectrónica de Sevilla (CSIC-Universidad de Sevilla), Spain
This project is dedicated to the design of a photo-sensing structure capable of obtaining information about the luminous intensity emitted/reflected by each point of the image and also of the distance from the sensor to the objects in the scene through the estimation of the time-of-flight. A feasible and CMOS-compatible alternative to implement on-chip ToF estimation is the use of single-photon avalanche diodes (SPADs). Using a pulsed light source, the SPAD is capable to precisely detecting the arrival of the first reflected photon. Compatibility with standard processes permits to integrate active quenching and recharge circuits. Also, time-to-digital converters (TDCs) can be incorporated in-pixel in order to establish the detection instant very accurately.
Application deadline: Mar. 1, 2018