Design of a light intensity/ToF sensor in CMOS technology and a 2D/3D smart camera
@ Instituto de Microelectrónica de Sevilla (CSIC-Universidad de Sevilla), Spain
This project is dedicated to the design of a photo-sensing structure capable of obtaining information about the luminous intensity emitted/reflected by each point of the image and also of the distance from the sensor to the objects in the scene through the estimation of the time-of-flight. A feasible and CMOS-compatible alternative to implement on-chip ToF estimation is the use of single-photon avalanche diodes (SPADs). Using a pulsed light source, the SPAD is capable to precisely detecting the arrival of the first reflected photon. Compatibility with standard processes permits to integrate active quenching and recharge circuits. Also, time-to-digital converters (TDCs) can be incorporated in-pixel in order to establish the detection instant very accurately.
Mojtaba Parsakordasiabi was born in Ghaemshahr, Mazandaran, Iran. He received B.E. degree in Electronics Engineering from Sharif University of Technology, Tehran, Iran in 2011, and an M.S. degree in Electronics Engineering from University of Tehran, Tehran Iran in 2014. Then, he worked in industry for four years. In October 2018, he joined Instituto de Microelectronica de Sevilla (IMSE-CNM), Sevilla, Spain, where he is currently a PhD researcher. His research interests include design & implementation of signal and image processing systems, and FPGA-based design.
Design of a light intensity/ToF sensor in CMOS technology and a 2D/3D smart camera.