A. Toro-Frías; R. Castro-López; E. Roca; F. V. Fernández; J. Martin-Martinez; R. Rodriguez; M. Nafria, “A fast and accurate reliability simulation method for analog circuits”, Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD), 2015 International Conference on, pp. 1-4 (2015)
Author: Montserrat Nafría Maqueda
Threshold voltage and on-current Variability related to interface traps spatial distribution
V. Velayudhan, J.Martin-Martinez, M. Porti, C. Couso, R. Rodriguez, M. Nafria, X. Aymerich, C. Marquez, F. Gamiz, “Threshold voltage and on-current Variability related to interface traps spatial distribution”, 45th European Solid State Device Research Conference (ESSDERC), pp. 230 – 233 (2015)
DOI: 10.1109/ESSDERC.2015.7324756
CAFM analysis of the Temperature Dependence of Random Telegraph Noise in SiON gate dielectrics
Q. Wu, J. Martín-Martínez, M. Porti, R. Rodríguez, M. Nafría, X. Aymerich, “CAFM analysis of the Temperature Dependence of Random Telegraph Noise in SiON gate dielectrics”, 19th Workshop on Dielectrics in Microelectronics (WODIM), (2016)
Intra-device statistical parameters in variability-aware modelling of resistive switching devices
A. Crespo-Yepes, J. Martin-Martinez, I. Rama, M. Maestro, R. Rodriguez, M. Nafria, X. Aymerich, M. B. Gonzalez, F. Campabadal, “Intra-device statistical parameters in variability-aware modelling of resistive switching devices”, 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), pp. 84-87 (2016)
DOI: 10.1109/ULIS.2016.7440058
New insights on the origin of resistive switching in HfO2 thin films: the role of local mechanical strength
Y. Shi, Y. Ji, F. Hui, M. Nafria, M. Porti, G. Bersuker and M. Lanza, “New insights on the origin of resistive switching in HfO2 thin films: the role of local mechanical strength”, Proceedings of the 22nd International Symposium on the Physical & Failure Analysis of Integrated Circuits (IPFA), pp. 472 – 475 (2015)
DOI: 10.1109/IPFA.2015.7224435.
Random Telegraph noise analysed by using Weighted Time Lag method in Resistive switching devices
M. Maestro, J. Diaz, A. Crespo-Yepes, J. Martin-Martinez , R. Rodriguez, M. B. Gonzalez, F. Campabadal, M. Nafria, X. Aymerich, ”Random Telegraph noise analysed by using Weighted Time Lag method in Resistive switching devices”, Libro de abstracts de la 7th International Conference on Unsolved problems of noise (UPON), pp. 145-146 (2015).
Connecting the physical and application level towards grasping aging effects
H. Amrouch, J. Martin-Martinez, V. M. van Santen, M. Moras, R. Rodriguez, M. Nafria, and X. Aymerich, “Connecting the physical and application level towards grasping aging effects”, Proceedings of the IEEE International Reliability Physics Symposium (IRPS), pp. 3D.1.1 – 3D.1.8 (2015)
DOI: 10.1109/IRPS.2015.7112711.
Current-limiting and ultrafast system for the characterization of Resistive Random Access Memories
J. Diaz-Fortuny, M. Maestro, J. Martin-Martinez, A. Crespo-Yepes, R. Rodriguez, M. Nafria and X. Aymerich, “Current-limiting and ultrafast system for the characterization of Resistive Random Access Memories”, Review of Scientific Instruments, Vol. 87, Issue 6, 064705 (2016)
DOI: 10.1063/1.4954973
Open access http://ddd.uab.cat/record/163087
Conductance of Threading Dislocations in InGaAs/Si Stacks by Temperature-CAFM Measurements
C. Couso, V. Iglesias, M. Porti, S. Claramunt, M. Nafria, N. Domingo, G. Bersuker and A. Cordes, “Conductance of Threading Dislocations in InGaAs/Si Stacks by Temperature-CAFM Measurements”, IEEE Electron Device Letters, Vol. 37, Issue: 5, pp. 640-643 (2016)
DOI: 10.1109/LED.2016.2537051
open access http://ddd.uab.cat/record/163088
A new high resolution Random Telegraph Noise (RTN) characterization method for Resistive RAM
M. Maestro, J. Diaz, A. Crespo-Yepes, M. B. Gonzalez, J. Martin-Martinez, R. Rodriguez, M. Nafria, F. Campabadal and X. Aymerich, “A new high resolution Random Telegraph Noise (RTN) characterization method for Resistive RAM”, Solid State Electronics, Vol. 115, pp. 140-145 (2016)
DOI: 10.1016/j.sse.2015.08.010
Open access http://ddd.uab.cat/record/163089
Dedicated random telegraph noise characterization of Ni/HfO2-based RRAM devices
M.B. Gonzalez, J. Martin-Martinez, R. Rodriguez, M.C. Acero, M. Nafria, F. Campabadal, X. Aymerich, “Dedicated random telegraph noise characterization of Ni/HfO2-based RRAM devices”, Microelectronic Engineering, Vol.147, pp. 59-62 (2015)
DOI: 10.1016/j.mee.2015.04.046
Open access http://ddd.uab.cat/record/136895
Non-homogeneous conduction of conductive filaments in Ni/HfO2/Si resistive switching structures observed with CAFM
S. Claramunt, Q. Wu, M. Maestro, M. Porti, M.B. Gonzalez, J. Martin-Martinez, F. Campabadal, M. Nafria, “Non-homogeneous conduction of conductive filaments in Ni/HfO2/Si resistive switching structures observed with CAFM”, Microelectronic Engineering, Vol. 147 pp. 335–338 (2015)
DOI: 10.1016/j.mee.2015.04.112
Monitoring defects in III–V materials: A nanoscale CAFM study
V. Iglesias, Q. Wu, M. Porti, M. Nafria, G. Bersuker, A. Cordes, “Monitoring defects in III–V materials: A nanoscale CAFM study”, Microelectronic Engineering, Vol. 147 pp, 31–36 (2015)
DOI: 10.1016/j.mee.2015.04.058
Open access http://ddd.uab.cat/record/136896
Analysis of Set and Reset mechanisms in Ni/HfO2-based RRAM with fast ramped voltages
M. Maestro, J. Martin-Martinez, J. Diaz, A. Crespo-Yepes, M. B. Gonzalez, R. Rodriguez, F. Campabadal, M. Nafria, X. Aymerich, “Analysis of Set and Reset mechanisms in Ni/HfO2-based RRAM with fast ramped voltages”, Microelectronic Engineering, Vol. 147, pp.176–179 (2015)
DOI: 10.1016/j.mee.2015.04.057
Open access http://ddd.uab.cat/record/133466
Channel-Hot-Carrier degradation of strained MOSFETs: A device level and nanoscale combined approach
Q. Wu, M. Porti, A. Bayerl, J. Martin-Martinez, R. Rodriguez, M. Nafria, X. Aymerich, E. Simoen, “Channel-Hot-Carrier degradation of strained MOSFETs: A device level and nanoscale combined approach”, Journal of Vacuum Science and Technology B, Vol 33, 022202, (2015)
Conductive-AFM topography and current maps simulator for the study of polycrystalline high-k dielectrics
C. Couso, M. Porti, J. Martin-Martinez, V. Iglesias, M. Nafria and X. Aymerich, “Conductive-AFM topography and current maps simulator for the study of polycrystalline high-k dielectrics”, Journal of Vacuum Science and Technology B, Vol 33, 031801, (2015)
DOI: 10.1116/1.4915328
Open access http://ddd.uab.cat/record/136766