An automated design methodology of RF circuits by using Pareto-optimal fronts of EM-simulated inductors

R. González-Echevarría, E. Roca, R. Castro-López, F.V: Fernández, J. Sieiro, J.M.López-Villegas, N. Vidal, “An automated design methodology of RF circuits by using Pareto-optimal fronts of EM-simulated inductors, ” IEEE Trans. COMPUTER-AIDED DESIGN of Integrated Circuits and Systems, Aceptado, 2016.

DOI: 10.1109/TCAD.2016.2564362

A Fast Readout Electronic System for Accurate Spatial Detection in Ion Beam Tracking for the Next Generation of Particle Accelerator

A. Garzón-Camacho, B. Fernández, M.A.G. Alvarez, J. Ceballos and J.M. de la Rosa: “A Fast Readout Electronic System for Accurate Spatial Detection in Ion Beam Tracking for the Next Generation of Particle Accelerators.” IEEE Trans. on Instrumentation and Measurement, vol. 64, pp. 318-327, February 2015.

DOI 10.1109/TIM.2014.2344351

Open Access: http://hdl.handle.net/10261/109682

Automated generation of optimal performance trade-offs of integrated inductors

R. González-Echevarría, R. Castro-López, E. Roca, F.V. Fernández, J. Sieiro, N. Vidal and J.M. López-Villegas, “Automated generation of optimal performance trade-offs of integrated inductors,” IEEE Trans. on Computer-Aided Design of Integrated Circuits and Systems, pp. 1269-1273, Vol. 33, No. 8, Aug. 2014.

DOI 10.1109/TCAD.2014.2316092

Generation of surrogate models of Pareto-optimal performance trade-offs of planar inductors

M. Kotti, R. González-Echevarría, F.V. Fernández, E. Roca, J. Sieiro, R. Castro-López, M.Fakhfakh and J.M. López-Villegas, “Generation of surrogate models of Pareto-optimal performance trade-offs of planar inductors”, Analog Integrated Circuits and Signal Processing, Vol. 78, No. 1, pp. 87-97, Jan. 2014.

doi:10.1007/s10470-013-0230-8

Current-limiting and ultrafast system for the characterization of Resistive Random Access Memories

J. Diaz-Fortuny, M. Maestro, J. Martin-Martinez, A. Crespo-Yepes, R. Rodriguez, M. Nafria and X. Aymerich, “Current-limiting and ultrafast system for the characterization of Resistive Random Access Memories”, Review of Scientific Instruments, Vol. 87, Issue 6, 064705 (2016)

DOI: 10.1063/1.4954973
Open access http://ddd.uab.cat/record/163087

Conductance of Threading Dislocations in InGaAs/Si Stacks by Temperature-CAFM Measurements

C. Couso, V. Iglesias, M. Porti, S. Claramunt, M. Nafria, N. Domingo, G. Bersuker and A. Cordes, “Conductance of Threading Dislocations in InGaAs/Si Stacks by Temperature-CAFM Measurements”, IEEE Electron Device Letters,  Vol. 37,  Issue: 5, pp. 640-643 (2016)

DOI: 10.1109/LED.2016.2537051
open access http://ddd.uab.cat/record/163088

A new high resolution Random Telegraph Noise (RTN) characterization method for Resistive RAM

M. Maestro, J. Diaz, A. Crespo-Yepes, M. B. Gonzalez, J. Martin-Martinez, R. Rodriguez, M. Nafria, F. Campabadal and X. Aymerich, “A new high resolution Random Telegraph Noise (RTN) characterization method for Resistive RAM”, Solid State Electronics, Vol. 115, pp. 140-145 (2016)

DOI: 10.1016/j.sse.2015.08.010
Open access http://ddd.uab.cat/record/163089