Ahmet Unutulmaz; Gunhan Dundar; Francisco V. Fernandez , “On the convex formulation of area for slicing floorplans”, Integration, the VLSI Journal, Aceptado, vol. 50, pp. 74-80, 2015.
2015 Journals
Next-Generation Delta-Sigma Converters: Trends and Perspectives
J.M. de la Rosa, R. Schreier, K.P. Pun, S. Pavan, “Next-Generation Delta-Sigma Converters: Trends and Perspectives”, IEEE Journal on Emerging and Selected Topics in Circuits and Systems, vol. 5(4), pp. 484-499, 2015.
A Fast Readout Electronic System for Accurate Spatial Detection in Ion Beam Tracking for the Next Generation of Particle Accelerator
A. Garzón-Camacho, B. Fernández, M.A.G. Alvarez, J. Ceballos and J.M. de la Rosa: “A Fast Readout Electronic System for Accurate Spatial Detection in Ion Beam Tracking for the Next Generation of Particle Accelerators.” IEEE Trans. on Instrumentation and Measurement, vol. 64, pp. 318-327, February 2015.
Open Access: http://hdl.handle.net/10261/109682
Dedicated random telegraph noise characterization of Ni/HfO2-based RRAM devices
M.B. Gonzalez, J. Martin-Martinez, R. Rodriguez, M.C. Acero, M. Nafria, F. Campabadal, X. Aymerich, “Dedicated random telegraph noise characterization of Ni/HfO2-based RRAM devices”, Microelectronic Engineering, Vol.147, pp. 59-62 (2015)
DOI: 10.1016/j.mee.2015.04.046
Open access http://ddd.uab.cat/record/136895
Non-homogeneous conduction of conductive filaments in Ni/HfO2/Si resistive switching structures observed with CAFM
S. Claramunt, Q. Wu, M. Maestro, M. Porti, M.B. Gonzalez, J. Martin-Martinez, F. Campabadal, M. Nafria, “Non-homogeneous conduction of conductive filaments in Ni/HfO2/Si resistive switching structures observed with CAFM”, Microelectronic Engineering, Vol. 147 pp. 335–338 (2015)
DOI: 10.1016/j.mee.2015.04.112
Monitoring defects in III–V materials: A nanoscale CAFM study
V. Iglesias, Q. Wu, M. Porti, M. Nafria, G. Bersuker, A. Cordes, “Monitoring defects in III–V materials: A nanoscale CAFM study”, Microelectronic Engineering, Vol. 147 pp, 31–36 (2015)
DOI: 10.1016/j.mee.2015.04.058
Open access http://ddd.uab.cat/record/136896
Analysis of Set and Reset mechanisms in Ni/HfO2-based RRAM with fast ramped voltages
M. Maestro, J. Martin-Martinez, J. Diaz, A. Crespo-Yepes, M. B. Gonzalez, R. Rodriguez, F. Campabadal, M. Nafria, X. Aymerich, “Analysis of Set and Reset mechanisms in Ni/HfO2-based RRAM with fast ramped voltages”, Microelectronic Engineering, Vol. 147, pp.176–179 (2015)
DOI: 10.1016/j.mee.2015.04.057
Open access http://ddd.uab.cat/record/133466
Channel-Hot-Carrier degradation of strained MOSFETs: A device level and nanoscale combined approach
Q. Wu, M. Porti, A. Bayerl, J. Martin-Martinez, R. Rodriguez, M. Nafria, X. Aymerich, E. Simoen, “Channel-Hot-Carrier degradation of strained MOSFETs: A device level and nanoscale combined approach”, Journal of Vacuum Science and Technology B, Vol 33, 022202, (2015)
Conductive-AFM topography and current maps simulator for the study of polycrystalline high-k dielectrics
C. Couso, M. Porti, J. Martin-Martinez, V. Iglesias, M. Nafria and X. Aymerich, “Conductive-AFM topography and current maps simulator for the study of polycrystalline high-k dielectrics”, Journal of Vacuum Science and Technology B, Vol 33, 031801, (2015)
DOI: 10.1116/1.4915328
Open access http://ddd.uab.cat/record/136766
On the convex formulation of area for slicing floorplans
A. Unutulmaz, G. Dundar and F. V. Fernandez, “On the convex formulation of area of slicing floorplans,” Integration, the VLSI Journal, Vol. 50, pp. 74-80, June 2015.