Channel-Hot-Carrier degradation of strained MOSFETs: A device level and nanoscale combined approach

Q. Wu, M. Porti, A. Bayerl, J. Martin-Martinez, R. Rodriguez, M. Nafria, X. Aymerich, E. Simoen, “Channel-Hot-Carrier degradation of strained MOSFETs: A device level and nanoscale combined approach”, Journal of Vacuum Science and Technology B, Vol 33, 022202, (2015)