Analysis of Set and Reset mechanisms in Ni/HfO2-based RRAM with fast ramped voltages

M. Maestro, J. Martin-Martinez, J. Diaz, A. Crespo-Yepes, M. B. Gonzalez, R. Rodriguez, F. Campabadal, M. Nafria, X. Aymerich, “Analysis of Set and Reset mechanisms in Ni/HfO2-based RRAM with fast ramped voltages”, Microelectronic Engineering, Vol. 147, pp.176–179 (2015)

DOI: 10.1016/j.mee.2015.04.057
Open access http://ddd.uab.cat/record/133466