Dedicated random telegraph noise characterization of Ni/HfO2-based RRAM devices

M.B. Gonzalez, J. Martin-Martinez, R. Rodriguez, M.C. Acero, M. Nafria, F. Campabadal, X. Aymerich, “Dedicated random telegraph noise characterization of Ni/HfO2-based RRAM devices”, Microelectronic Engineering, Vol.147, pp. 59-62 (2015)

DOI: 10.1016/j.mee.2015.04.046
Open access http://ddd.uab.cat/record/136895