New insights on the origin of resistive switching in HfO2 thin films: the role of local mechanical strength

Y. Shi, Y. Ji, F. Hui, M. Nafria, M. Porti, G. Bersuker and M. Lanza, “New insights on the origin of resistive switching in HfO2 thin films: the role of local mechanical strength”, Proceedings of the 22nd International Symposium on the Physical & Failure Analysis of Integrated Circuits (IPFA), pp. 472 – 475 (2015)

DOI: 10.1109/IPFA.2015.7224435.